Department of
Micro- and nanoelectronics
The Department of “Micro- and Nanoelectronics” (formerly “Physical Materials Science for Electronics and Solar Energy”) was founded in 1988 on the initiative of the Honored Worker of Science and Technology of Ukraine, Doctor of Physical and Mathematical Sciences, Professor Boyko Borys Tymofiyovych. The teaching staff and research staff of the Department of Micro- and Nanoelectronics have created a material and technical base that allows implementing a comprehensive approach to student education and conducting intensive scientific work. The training and laboratory base contains industrial and laboratory vacuum installations and a variety of chemical equipment that allows obtaining thin films of metals, semiconductors, dielectrics and multilayer systems. The study of the structure of such objects is provided by optical and electronic (transmission and raster) microscopy, diffractometric methods.
ZAITSEV ROMAN
Head of Department
docent, Candidate of Technical Sciences
Graduate specialties and trajectories
Specialty 153 “Micro- and nanosystem engineering” — “Energy efficiency microelectronics and electronic protection”
Micro- and nanoelectronics is the most modern direction in science, technology and production, which is developing very rapidly all over the world. Nanoelectronics studies and uses physical phenomena and processes in electronic devices, the geometric dimensions of which are commensurate with the dimensions of molecules and atoms. Nanoelectronics is not only the future, but an extremely important and promising area of modern electronics. The latest high-speed processors and fundamentally new medical equipment, computers, gadgets, robots, tools and more.
Directions of scientific activity
Study of the interaction of electromagnetic waves with nanoscale multilayer structures for the development of new physical approaches to increase the efficiency of photoelectric conversion in semiconductor device structures; optimization of technological solutions of ZnO:Al, ZnO:In, ITO, SnO2:Sb film broadband “windows” for use in the construction of various electronics and solar energy products; development of the physical foundations of the technology for manufacturing the base layers of the Cu-In-Se system for photoelectric converters by electrochemical deposition methods and in a quasi-closed volume, which significantly reduce energy costs in the manufacture of such device structures; optimization of structural and technological solutions of photovoltaic converters based on crystalline silicon for terrestrial and space applications; development of solar radiation simulators of a new generation based on semiconductor LEDs; development of economic chemical technology for obtaining base and service layers of film solar cells; development of chemical technologies of nanostructured photoelectric converters; development of thermo-vacuum and magnetron technologies for the production of new types of film solar cells based on cadmium sulfide and telluride – a flexible configuration with an ultra-thin base layer.
Address
Kharkiv, prov. Podilsky, 2,
Educational building No. 3
Contacts
Phone: (057) 731-56-91
Email: kaf.fmeg@gmail.com